4n25-37_vis.pdf

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4N35/ 4N36/ 4N37
Vishay Telefunken
Optocoupler with Phototransistor Output
Description
The 4N35/ 4N36/ 4N37 consist of a phototransistor
optically coupled to a gallium arsenide infrared-
emitting diode in a 6-lead plastic dual inline package.
The elements are mounted on one leadframe using
a
coplanar technique,
providing a fixed distance
between input and output for highest safety
requirements.
Applications
Galvanically separated circuits for general purposes
95 10532
Features
D
Isolation test voltage (RMS) 3.75 kV
D
Underwriters Laboratory
(UL) 1577 recognized,
file number E-76222
B
6
C
5
E
4
D
Low coupling capacity of typical 0.3 pF
D
Current Transfer Ratio
(CTR) > 100%
D
Low temperature coefficient of CTR
1
2
A (+) C (–)
3
n.c.
Order Instruction
Ordering Code
4N35
4N36
4N37
CTR Ranking
> 100%
> 100%
> 100%
Remarks
Rev. A3, 11–Jan–99
95 10805
101
4N35/ 4N36/ 4N37
Vishay Telefunken
Absolute Maximum Ratings
Input (Emitter)
Parameter
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
Test Conditions
Symbol
V
R
I
F
I
FSM
P
V
T
j
Value
6
60
3
100
125
Unit
V
mA
A
mW
°
C
t
p
≤
m
s
T
amb
≤
25
°
C
Output (Detector)
Parameter
Collector base voltage
Collector emitter voltage
Emitter collector voltage
Collector current
Peak collector current
Power dissipation
Junction temperature
Test Conditions
Symbol
V
CBO
V
CEO
V
ECO
I
C
I
CM
P
V
T
j
Value
70
30
7
50
100
150
125
Unit
V
V
V
mA
mA
mW
°
C
t
p
/T = 0.5, t
p
≤
10 ms
T
amb
≤
25
°
C
Coupler
Parameter
Test Conditions
Isolation test voltage (RMS)
t = 1min
Total power dissipation
T
amb
≤
25
°
C
Ambient temperature range
Storage temperature range
Soldering temperature
2 mm from case, t
≤
10 s
1)
Related to standard climate 23/50 DIN 50014
Symbol
V
IO 1)
P
tot
T
amb
T
stg
T
sd
Value
3.75
250
–55 to +100
–55 to +125
260
Unit
kV
mW
°
C
°
C
°
C
102
Rev. A3, 11–Jan–99
4N35/ 4N36/ 4N37
Vishay Telefunken
Electrical Characteristics
(T
amb
= 25°C)
Input (Emitter)
Parameter
Forward voltage
Forward voltage
Junction capacitance
Test Conditions
I
F
= 10 mA
I
F
= 10 mA,
T
amb
= 100
°
C
V
R
= 0, f = 1 MHz
Symbol
V
F
V
F
C
j
Min.
Typ.
1.2
Max.
1.5
1.4
Unit
V
V
pF
50
Output (Detector)
Parameter
Collector base voltage
Collector emitter voltage
Emitter collector voltage
Collector dark current
Test Conditions
I
C
= 100
m
A
I
C
= 1 mA
I
E
= 100
m
A
I
F
= 0, E = 0, V
CE
= 10 V
I
F
= 0, E = 0, V
CE
= 30 V,
T
amb
= 100
°
C
Symbol
V
CBO
V
CEO
V
ECO
I
CEO
I
CEO
Min.
70
30
7
Typ.
Max.
Unit
V
V
V
nA
m
A
5
50
500
Coupler
Parameter
Isolation test voltage
(RMS)
Isolation resistance
Collector emitter
saturation voltage
Cut-off frequency
Test Conditions
f = 50 Hz, t = 2 s
V
IO
= 1 kV,
40% relative humidity
I
F
= 10 mA, I
C
= 0.5 mA
Symbol
V
IO1)
R
IO1)
V
CEsat
f
c
C
k
110
0.3
Min.
3.75
Typ.
Max.
Unit
kV
10
12
0.3
W
V
kHz
pF
I
F
= 10 mA, V
CE
= 5 V,
R
L
= 100
W
Coupling capacitance
f = 1 MHz
1)
Related to standard climate 23/50 DIN 50014
Current Transfer Ratio (CTR)
Parameter
I
C
/I
F
Type
4N35, 4N36,
4N37
V
CE
= 10 V, I
F
= 10 mA, 4N35, 4N36,
T
amb
= 100
°
C
4N37
Test Conditions
V
CE
= 10 V, I
F
= 10 mA
Symbol
CTR
CTR
Min.
1
0.4
Typ.
Max.
Unit
Rev. A3, 11–Jan–99
103
4N35/ 4N36/ 4N37
Vishay Telefunken
Switching Characteristics
Parameter
Turn-on time
(typical)
Turn-on time
(maximum)
Turn-off time
(typical)
Turn-off time
(maximum)
Turn-on time
Turn-off time
Test Conditions
V
S
= 10 V, I
C
= 2 mA, R
L
= 100
W
(see figure 1)
Symbol
t
on
t
on
t
off
t
off
V
S
= 5 V, I
F
= 10 mA, R
L
= 1 k
W
(
(see figure 2)
g
)
t
on
t
off
Typ.
5.5
10.0
4.5
10.0
9.0
18.0
Unit
m
s
m
s
m
s
m
s
m
s
m
s
0
I
F
I
F
+ 10 V
I
C
= 2 mA ; Adjusted trough
input amplitude
96 11698
I
F
0
t
p
I
C
R
G
= 50
W
t
p
0.01
T
t
p
= 50
m
s
+
t
Channel I
50
W
95 10845
100
W
Channel II
Oscilloscope
R
L
≥
1 M
W
C
L
≤
20 pF
100%
90%
Figure 1. Test circuit, non-saturated operation
10%
0
t
r
t
d
t
on
t
p
tion
t
d
t
r
t
on
(= t
d
+ t
r
)
pulse dura-
delay time
rise time
turn-on time
t
s
t
off
t
s
t
f
t
off
(= t
s
+ t
f
)
t
f
t
I
F
0
R
G
= 50
W
t
p
T
I
F
= 10 mA
+5V
I
C
storage time
fall time
turn-off time
+
0.01
t
p
= 50
m
s
Channel I
50
W
1 k
W
Channel II
Oscilloscope
R
L
≥
1 M
W
C
L
≤
20 pF
Figure 3. Switching times
95 10844
Figure 2. Test circuit, saturated operation
104
Rev. A3, 11–Jan–99
4N35/ 4N36/ 4N37
Vishay Telefunken
Typical Characteristics
(T
amb
= 25
_
C, unless otherwise specified)
300
P
tot
– Total Power Dissipation ( mW )
Coupled device
I
CEO
– Collector Dark Current,
with open Base ( nA )
250
200
Phototransistor
150
IR-diode
100
50
0
0
96 11700
10000
V
CE
=10V
I
F
=0
1000
100
10
1
40
80
120
96 11875
0
10 20 30 40 50 60 70 80 90 100
T
amb
– Ambient Temperature (
°C
)
T
amb
– Ambient Temperature (
°C
)
Figure 4. Total Power Dissipation vs.
Ambient Temperature
1000.0
I
CB
– Collector Base Current ( mA )
Figure 7. Collector Dark Current vs.
Ambient Temperature
1.000
V
CB
=10V
I
F
– Forward Current ( mA )
100.0
0.100
10.0
0.010
1.0
0.1
0
96 11862
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
F
– Forward Voltage ( V )
0.001
1
96 11876
10
I
F
– Forward Current ( mA )
100
Figure 5. Forward Current vs. Forward Voltage
CTR
rel
– Relative Current Transfer Ratio
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
–30 –20 –10 0 10 20 30 40 50 60 70 80
T
amb
– Ambient Temperature (
°C
)
V
CE
=10V
I
F
=10mA
Figure 8. Collector Base Current vs. Forward Current
100.00
V
CE
=10V
I
C
– Collector Current ( mA )
10.00
1.00
0.10
0.01
0.1
96 11904
1.0
10.0
100.0
96 11874
I
F
– Forward Current ( mA )
Figure 6. Relative Current Transfer Ratio vs.
Ambient Temperature
Figure 9. Collector Current vs. Forward Current
Rev. A3, 11–Jan–99
105

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