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PD -9.1276C
IRFZ34N
HEXFET
®
Power MOSFET
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
l
Ease of Paralleling
D
V
DSS
= 55V
R
DS(on)
= 0.040
W
G
I
D
= 29A
Description
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
29
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
20
A
I
DM
Pulsed Drain Current
100
P
D
@T
C
= 25°C
Power Dissipation
68
W
Linear Derating Factor
0.45
W/°C
V
GS
Gate-to-Source Voltage
± 20
V
E
AS
Single Pulse Avalanche Energy
65
mJ
I
AR
Avalanche Current
16
A
E
AR
Repetitive Avalanche Energy
6.8
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
R
q
JC
Junction-to-Case
––––
––––
2.2
R
q
CS
Case-to-Sink, Flat, Greased Surface
––––
0.50
––––
°C/W
R
q
JA
Junction-to-Ambient
––––
––––
62
8/25/97
IRFZ34N
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
55
–––
–––
V
V
GS
= 0V, I
D
= 250µA
Breakdown Voltage Temp. Coefficient
–––
0.052
–––
V/°C
Reference to 25°C, I
D
= 1mA
D
V
(BR)DSS
/
D
T
J
R
DS(ON)
Static Drain-to-Source On-Resistance
–––
–––
0.040
W
V
GS
= 10V, I
D
= 16A
V
GS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance
6.5
–––
–––
S
V
DS
= 25V, I
D
= 16A
–––
–––
25
V
DS
= 55V, V
GS
= 0V
I
DSS
Drain-to-Source Leakage Current
µA
–––
–––
250
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage
–––
–––
100
V
GS
= 20V
I
GSS
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
V
GS
= -20V
Q
g
Total Gate Charge
–––
–––
34
I
D
= 16A
Q
gs
Gate-to-Source Charge
–––
–––
6.8
nC
V
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge
–––
–––
14
V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
–––
7.0
–––
V
DD
= 28V
t
r
Rise Time
–––
49
–––
I
D
= 16A
ns
t
d(off)
Turn-Off Delay Time
–––
31
–––
R
G
= 18
W
t
f
Fall Time
–––
40
–––
R
D
= 1.8
W,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
D
L
D
Internal Drain Inductance
–––
4.5
–––
nH
G
L
S
Internal Source Inductance
–––
7.5
–––
S
C
iss
Input Capacitance
–––
700
–––
V
GS
= 0V
C
oss
Output Capacitance
–––
240
–––
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
–––
100
–––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Min.
Typ.
Max.
Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
D
–––
–––
29
(Body Diode)
showing the
A
Pulsed Source Current
integral reverse
I
SM
G
–––
–––
100
(Body Diode)
p-n junction diode.
S
V
SD
Diode Forward Voltage
–––
–––
1.6
V
T
J
= 25°C, I
S
= 16A, V
GS
= 0V
t
rr
Reverse Recovery Time
–––
57
86
ns
T
J
= 25°C, I
F
= 16A
Q
rr
Reverse Recovery Charge
–––
130
200
nC
di/dt = 100A/µs
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
£
16 A, di/dt
£
420A/µs, V
DD
£
V
(BR)DSS
,
T
J
£
175°C
V
DD
= 25V, starting T
J
= 25°C, L = 410µH
R
G
= 25
W
, I
AS
= 16A. (See Figure 12)
Pulse width
£
300µs; duty cycle
£
2%.
IRFZ34N
1000
1000
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
100
10
10
4.5V
4.5V
1
1
20µs PULSE WIDTH
T = 25°C
20µs PULSE W IDTH
T = 175°C
C
C
A
0.1
0.1
A
0.1
1
10
100
0.1
1
10
100
V , Drain-to-Source Voltage (V)
DS
V , Drain-to-Source Voltage (V)
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.4
I = 26A
D
2.0
T = 25°C
J
T = 175°C
J
1.6
10
1.2
0.8
0.4
V = 25V
20µs PULSE W IDTH
DS
V = 10V
GS
1
0.0
A
A
4
5
6
7
8
9
1 0
-60
-40
-20
0
20
40
60
80
100 120 140 160 180
V , Gate-to-Source Voltage (V)
T , Junction Temperature (°C)
GS
J
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
IRFZ34N
1200
20
I = 16A
V = 0V, f = 1M Hz
C = C + C , C SHORTED
C = C
C = C + C
D
GS
iss gs gd ds
rss gd
oss ds gd
V = 44V
V = 28V
DS
DS
1000
C
is s
16
800
C
oss
12
600
8
400
C
rss
4
200
FOR TEST CIRCUIT
SEE FIG URE 13
0
0
A
A
1
10
100
0
10
20
30
40
V , Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPE RATIO N IN THIS A RE A LIMITE D
BY R
DS(on)
100
100
10µs
T = 175°C
J
100µs
T = 25°C
J
10
10
1ms
T = 25°C
T = 175°C
Single Pulse
C
J
V = 0V
GS
A
1
1
A
0.4
0.8
1.2
1.6
2.0
1
10
100
V , Drain-to-Source Voltage (V)
DS
V , Source-to-Drain Voltage (V)
SD
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
IRFZ34N
30
R
D
V
DS
V
GS
25
D.U.T.
R
G
+
-
V
DD
20
10 V
Pulse Width
15
£ 1
µs
Duty Factor
£ 0.1 %
10
Fig 10a.
Switching Time Test Circuit
V
DS
90%
5
0
25
50
75
100
125
150
175
°
T , Case Temperature
( C)
C
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
Case Temperature
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
10
D = 0.50
1
0.20
0.10
0.05
P
DM
0.02
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.01
t
1
t
2
Notes:
1. Duty factor D =
t / t
1
2
2. Peak T
= P
x Z
+ T
J
DM
thJC
C
0.01
0.00001
0.0001
0.001
0.01
0.1
t , Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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