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1N4728A to 1N4749A
Voltage regulator diodes
Rev. 02 — 30 October 2009
Product data sheet
1.
Product profile
1.1
General description
Low voltage regulator diodes in hermetically sealed small SOD66 (DO-41) glass
packages.
The series consists of 22 types with nominal working voltages from 3.3 to 24 V.
1.2
Features
n
Total power dissipation:
max.
n
Tolerance series:
±
5%
£
1000 mW
n
Working voltage range:
nom. 3.3 V to 24 V
n
Small hermetically sealed glass
package
1.3
Applications
n
Low voltage stabilizers
1.4
Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V
F
forward voltage
I
F
= 200 mA
-
-
1.2
V
P
tot
total power dissipation
-
-
1000
mW
2.
Pinning information
Table 2.
Pinning
Pin
Description
Simplified outline
Graphic symbol
1
cathode
[1]
k
a
2
anode
1
2
006aaa152
[1]
The marking band indicates the cathode.
1N4728A to 1N4749A
Voltage regulator diodes
NXP Semiconductors
3.
Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
1N4728A to
1N4749A
[1]
-
hermetically sealed glass package; axial leaded;
2 leads
SOD66
[1]
The series consists of 22 types with nominal working voltages from 3.3 V to 24 V.
4.
Marking
Table 4. Marking codes
Type number
Marking code
1N4728A to 1N4749A
The diodes are type branded.
5.
Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
I
F
forward current
-
500
mA
I
Z
working current
-
see
Table 8
I
ZSM
non-repetitive peak reverse
current
-
see
Table 8
P
tot
total power dissipation
T
amb
=50
°
C
-
1000
mW
T
j
junction temperature
-
65
+200
°
C
T
stg
storage temperature
-
65
+200
°
C
1N4728A_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 30 October 2009
2 of 10
1N4728A to 1N4749A
Voltage regulator diodes
NXP Semiconductors
6.
Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
R
th(j-t)
thermal resistance from
junction to tie-point
lead length 4 mm
-
-
110
K/W
006aab843
10
3
R
th(j-t)
(K/W)
d
= 1
0.75
0.50
0.33
0.20
0.10
0.05
10
2
10
0.02
0.01
0
1
10
-
1
10
2
10
3
10
4
10
5
1
10
t
p
(ms)
Fig 1.
Thermal resistance from junction to tie-point as a function of pulse duration;
lead length 4 mm
7.
Characteristics
Table 7.
Characteristics
T
j
=25
C unless otherwise specified.
Symbol
°
Parameter
Conditions
Min
Typ
Max
Unit
V
F
forward voltage
I
F
= 200 mA
-
-
1.2
V
1N4728A_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 30 October 2009
3 of 10
1N4728A to 1N4749A
Voltage regulator diodes
NXP Semiconductors
Table 8.
Characteristics per type
T
j
=25
°
C unless otherwise specified.
Type
number
Working
voltage
V
Z
(V)
[1]
Test
current
I
test
(mA)
Differential
resistance
r
dif
(
Reverse current
I
R
(
Working
current
I
Z
(mA)
Non-repetitive
peak reverse
current
I
ZSM
(mA)
[2]
m
A)
W
)
at I
test
at I
test
at I
Z
I
Z
(mA)
Nom
Max
Max
Max
V
R
(V)
Max
Max
1N4728A
3.3
76
10
400
1
100
1
276
1380
1N4729A
3.6
69
10
400
1
100
1
252
1260
1N4730A
3.9
64
9
400
1
50
1
234
1190
1N4731A
4.3
58
9
400
1
10
1
217
1070
1N4732A
4.7
53
8
500
1
10
1
193
970
1N4733A
5.1
49
7
550
1
10
1
178
890
1N4734A
5.6
45
5
600
1
10
2
162
810
1N4735A
6.2
41
2
700
1
10
3
146
730
1N4736A
6.8
37
3.5
700
1
10
4
133
660
1N4737A
7.5
34
4
700
0.5
10
5
121
605
1N4738A
8.2
31
4.5
700
0.5
10
6
110
550
1N4739A
9.1
28
5
700
0.5
10
7
100
500
1N4740A
10
25
7
700
0.25
10
7.6
91
454
1N4741A
11
23
8
700
0.25
5
8.4
83
414
1N4742A
12
21
9
700
0.25
5
9.1
76
380
1N4743A
13
19
10
700
0.25
5
9.9
69
344
1N4744A
15
17
14
700
0.25
5
11.4
61
304
1N4745A
16
15.5
16
700
0.25
5
12.2
57
285
1N4746A
18
14
20
750
0.25
5
13.7
50
250
1N4747A
20
12.5
22
750
0.25
5
15.2
45
225
1N4748A
22
11.5
23
750
0.25
5
16.7
41
205
1N4749A
24
10.5
25
750
0.25
5
18.2
38
190
[1]
V
Z
is measured with device at thermal equilibrium while held in clips at 10 mm from body in still air at 25
°
C.
[2]
Half square wave or equivalent sine wave pulse 1/120 second duration superimposed on I
test
.
1N4728A_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 30 October 2009
4 of 10
1N4728A to 1N4749A
Voltage regulator diodes
NXP Semiconductors
mbg925
300
I
F
(mA)
200
(1)
(2)
100
0
0
0.5
1.0
V
F
(V)
(1)
T
j
= 200
°
C
(2)
T
j
=25
°
C
Fig 2.
Forward current as a function of forward voltage; typical values
1N4728A_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 30 October 2009
5 of 10
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